An Advancement In Power Saving Electronics Is Leading The Way For A Carbon-Neutral World

Power-saving electronics are becoming increasingly important in the quest for a carbon-neutral world. Advancements in this technology are making it possible to reduce the amount of energy consumed by electronic devices, which in turn reduces greenhouse gas emissions and helps to mitigate climate change.

Currently, in this new report, released on June 21, 2021, in Nature Electronics, researchers detail how to exactly quantify this electrical field, implying next-generation power and radio frequency electronic equipment can be created which have the capability to be faster and more reliable, in addition to more energy-efficient.

Semiconductor equipment

Semiconductor equipment design is a complex process that relies heavily on device simulation to guide the construction of semiconductor devices for real-life applications. However, the accuracy and precision of these simulations can vary depending on distinct factors, including the complexity of the device being simulated and the quality of the simulation software being used.

Semiconductors can be manufactured to conduct positive or negative charges and can, for that reason, be developed to regulate and adjust current. Nevertheless, these semiconductor devices do not stop at Silicon; there are numerous others, some consisting of Gallium Nitride (utilized in blue LEDs, for instance).

These semiconductor devices, which for example, transform an AC current from a power cable into a DC current, lead to a loss of power as waste heat– consider a laptop, for instance, the power brick is getting warm or perhaps hot. We will save power by boosting efficiency and minimizing this waste heat. Said Professor Martin Kuball of the University of Bristol’s School of Physics.

Professor Martin Kuball

Professor Martin Kuball continued by saying that if one applies a voltage to an electronic device. Consequently, there is an output current utilized in the application. Inside this electronic device is an electrical field that establishes how it functions, for how long it will be functional, and how good its operation is. No one can, in reality, measure this electrical field, which is so essential to the device’s operation. One would always count on simulation, which is difficult to rely on unless its precision can actually be evaluated.

Scientists need to discover an ideal design using new materials like Gallium Nitride and Gallium Oxide, which allow for operation at higher frequencies and voltages, respectively, to create durable and efficient electronic equipment. The University of Bristol team’s work released an optical tool that directly measures electrical fields inside these new devices, which will underpin future efficient power electronics in applications such as solar/wind generators, trains, trucks, electric cars, and aircraft. Lower power loss means less energy generation, benefiting society.

Higher voltages

Professor Kuball noted that higher voltages in devices result in higher electrical fields and increased susceptibility to failure. However, he and his team have developed a new method for quantifying electrical fields within devices. Precise calibration of device simulations is crucial for designing electronic equipment that meets specifications and avoids exceeding critical electrical field limits, which can cause device failure. Accurate calibration helps ensure that device simulations predict the semiconductor material’s behavior.

Prof. Kuball and his team will collaborate with industrial stakeholders to advance their device technology using their new method. They’ll also work with partners in the $12M DOE ULTRA center to make ultra-wide bandgap equipment technology a reality, enabling over 10% power savings worldwide. This advancement will contribute to developing energy-saving semiconductor devices, helping the UK and the world move towards a carbon-neutral society.

The method was established as part of an Engineering and also Physical Sciences Research Council (EPSRC) project.

Originally published by: scitechdaily.com

Reference: “Electric field mapping of wide-bandgap semiconductor devices at a submicrometre resolution” by Yuke Cao, James W. Pomeroy, Michael J. Uren, Feiyuan Yang and Martin Kuball, 21 June 2021, Nature Electronics.

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