Utilizing Lattice Distortions to Improve Carrier Mobility in 2D Semiconductors
The researchers' method: introducing ripples in 2D material, molybdenum disulfide to achieve two orders of magnitude enhancement in carrier mobility at room temperature, allowing electrons to move faster through the material. Credit: Dr. Wu Jing, A*STAR, Institute of Materials Research and Engineering.Two-dimensional (2D) semiconductors are semiconducting materials with thicknesses on the atomic range, which...